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| irl2203npbf hexfet ? power mosfet parameter typ. max. units r jc junction-to-case ??? 0.85 r cs case-to-sink, flat, greased surface 0.50 ??? c/w r ja junction-to-ambient ??? 62 thermal resistance www.irf.com 1 v dss = 30v r ds(on) = 7.0m ? i d = 116a s d g to-220ab advanced hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the to-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. the low thermal resistance and low package cost of the to-220 contribute to its wide acceptance throughout the industry. advanced process technology ultra low on-resistance dynamic dv/dt rating 175c operating temperature fast switching fully avalanche rated lead-free description pd - 94953 absolute maximum ratings parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 116 i d @ t c = 100c continuous drain current, v gs @ 10v 82 a i dm pulsed drain current 400 p d @t c = 25c power dissipation 180 w linear derating factor 1.2 w/c v gs gate-to-source voltage 16 v i ar avalanche current 60 a e ar repetitive avalanche energy 18 mj dv/dt peak diode recovery dv/dt 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 srew 10 lbf?in (1.1n?m)
2 www.irf.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 30 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.029 ??? v/c reference to 25c, i d = 1ma ??? ??? 7.0 v gs = 10v, i d = 60a ??? ??? 10 v gs = 4.5v, i d = 48a v gs(th) gate threshold voltage 1.0 ??? ??? v v ds = v gs , i d = 250a g fs forward transconductance 73 ??? ??? s v ds = 25v, i d = 60a ??? ??? 25 a v ds = 30v, v gs = 0v ??? ??? 250 v ds = 24v, v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? 100 v gs = 16v gate-to-source reverse leakage ??? ??? -100 na v gs = -16v q g total gate charge ??? ??? 60 i d = 60a q gs gate-to-source charge ??? ??? 14 nc v ds = 24v q gd gate-to-drain ("miller") charge ??? ??? 33 v gs = 4.5v, see fig. 6 and 13 t d(on) turn-on delay time ??? 11 ??? v dd = 15v t r rise time ??? 160 ??? i d = 60a t d(off) turn-off delay time ??? 23 ??? r g = 1.8 ? t f fall time ??? 66 ??? v gs = 4.5v, see fig. 10 between lead, 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 3290 ??? v gs = 0v c oss output capacitance ??? 1270 ??? v ds = 25v c rss reverse transfer capacitance ??? 170 ??? pf ? = 1.0mhz, see fig. 5 e as single pulse avalanche energy ??? 1320 290 mj i as = 60a, l = 0.16mh s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source curre nt integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.2 v t j = 25c, i s = 60a, v gs = 0v t rr reverse recovery time ??? 56 84 ns t j = 25c, i f = 60a q rr reverse recovery charge ??? 110 170 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 116 400 starting t j = 25c, l = 0.16mh r g = 25 ? , i as = 60a, v gs =10v (see figure 12) repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) i sd 60a di/d 110a/s, v dd v (br)dss , t j 175c pulse width 400s; duty cycle 2%. this is a typical value at device destruction and represents operation outside rated limits. this is a calculated value limited to t j = 175c . calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a. s d g electrical characteristics @ t j = 25c (unless otherwise specified) r ds(on) static drain-to-source on-resistance l s internal source inductance ??? 7.5 ??? l d internal drain inductance ??? 4.5 ??? i dss drain-to-source leakage current m ? www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.7v 1 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.7v 10 100 1000 2.0 3.0 4.0 5.0 6.0 7.0 v = 15v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 100a 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 20 40 60 80 0 3 6 9 12 15 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 60a v = 15v ds v = 24v ds 0.1 1 10 100 1000 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 0 1000 2000 3000 4000 5000 6000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 1 10 100 v ds , drain-tosource voltage (v) 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) v ds 90% 10% v gs t d(on) t r t d(off) t f 1 0.1 % + - 25 50 75 100 125 150 175 0 20 40 60 80 100 120 t , case temperature ( c) i , drain current (a) c d limited by package 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - t p v (br)dss i as ! " #$ 25 50 75 100 125 150 175 0 100 200 300 400 500 600 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 24a 42a 60a r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? ? ? !" # % $" " % $ #" " # ? %&' ? ( ) ? %&% * + $ #,- % #) " ,,)!$. &' %%% /0,%+"% 1""# for n-channel hexfet ? power mosfets 8 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 01/04 lead assignments 1 - gate 2 - drain 3 - source 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) min 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. hexfet 1- gate 2- drain 3- source 4- drain lead assignments igbts, copack 1- gate 2- collector 3- emitter 4- collector dimensions are shown in millimeters (inches) example: in the assembly line "c" t his is an irf 1010 lot code 1789 as s e mb le d on ww 19, 1997 part number as s e mb l y lot code dat e code ye ar 7 = 1997 line c week 19 logo re ct if ie r int e rnat ional note: "p" in assembly line position indicates "lead-free" note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ |
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